Ion of Silicon, Z=14, I.P.=65748 cm-1
References:
Savukov L. // Phys. Rev. A - 2016 - Vol. 93 - P. 022511.
Lawler J., Dakin J. // JOSA B - 1989 - Vol. 6 - P. 1457-1466.
Martin W., Zalubas R. // J. Phys. and Chem. Ref. Data - 1983 - Vol. 12, ¹ 2 - P. 323-380.
Bashkin S. et al. // Phys. Scr. - 1980 - Vol. 21, ¹ 6 - P. 820-824.
O'Brian T., Lawler J. // Phys. Rev. A - 1991 - Vol. 44, ¹ 11 - P. 7134-7143.
Brown C. et al. // JOSA - 1974 - Vol. 64, ¹ 12 - P. 1665-1682.
Ïåòåðêîï Ð.Ê. // ÎèÑ - 1985 - Ò. 58, ¹ 1 - Ñ. 202-204.
Liang L. et al. // Opt. Commun. - 2008 - Vol. 281, ¹ 8 - P. - 2107-2111.
Fischer Ch. // Phys. Rev. A - 2005 - Vol. 71, ¹ 4 - P. 042506.
Kelleher D., Podobedova L. // J. Phys. and Chem. Ref. Data - 2008 - Vol. 37, ¹ 3 - P. 1285-1500.
Gedeon V. et al. // Phys. Rev. A - 2012 - Vol. 85 - P. 022711.
Shi J. et al. // Astrophys. J. - 2012 - Vol. 755 - P. 36
Electronic structure
Found 543 levels. [view]Found 701 transitions. [view]